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 KSP2222
KSP2222
General Purpose Transistor
* Collector-Emitter Voltage: VCEO= 30V * Collector Dissipation: PC (max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Value 60 30 5 600 625 150 -55 ~ 150 Units V V V mA mW C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=50V, IE=0 VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, *IC=150mA VCE=10V, *IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCB=10V, IE=0, f=1MHz VCE=20V, IC=20mA f=100MHz VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA 250 35 285 35 50 75 100 30 Min. 60 30 5 10 Typ. Max. Units V V V nA
300 0.4 1.6 1.3 2.6 8 V V V V pF MHz ns ns
VCE (sat) VBE (sat) Cob fT tON tOFF
* Collector-Emitter Saturation Voltage * Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Turn Off Time
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSP2222
Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1k
10
VCE = 10V
IC = 10 IB
hFE, DC CURRENT GAIN
1
V BE(sat)
100
0.1
V CE(sat)
10
1
10
100
1000
0.01 1 10 100 1000
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100
1000
IE = 0 f = 1MHz
VCE = 20V
Cob [pF], CAPACITANCE
10
100
1
0.1 1 10 100
10 1 10 100 1000
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Current Gain Bandwidth Product
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSP2222
Package Demensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E


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